For the analysis of a power electronic circuit designs that need to be like in reality, we need a more accurate model. In power electronics, MOSFET transistors are the most usual. In what follows we will post the list spice models for transistors like IRF540, IRFZ44, IRF810, etc. Level 3 empirical models.
To simulate real life due to parasitic inductances will include TO220 or TO204 lead inductances as follows:
For TO-204 (modified TO-3) source = 12.5nH drain = 5.0nH
For TO-220 source = 7.5nH drain = 3.5-4.5nH
For TO-220 source = 7.5nH drain = 3.5-4.5nH
Because we introduced lead inductances, voltage spikes due to di/dt will be modeled. This is important because we will see if a MOSFET will exceed the Safe Operating Area, and Maximum Drain Voltage.
The models will work for Orcad or Ltspice with very minor modifications or not.
In this model LEVEL 3 the following effects are modeled:
-transfer curves in forward operation
-gate drive characterization of impedance and switching delay for loads
- Rds on resistance variation with respect of Vgs
- reverse mode operation of body diode
IRF510 spice model
.model IRF510 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=.4508 Kp=20.68u W=.64 L=2u Vto=3.697
+ Rd=21.08m Rds=444.4K Cbd=366.5p Pb=.8 Mj=.5 Fc=.5 Cgso=600.5p
+ Cgdo=62.71p Rg=2.977 Is=202.9f N=1 Tt=135n)
+ Tox=100n Uo=600 Phi=.6 Rs=.4508 Kp=20.68u W=.64 L=2u Vto=3.697
+ Rd=21.08m Rds=444.4K Cbd=366.5p Pb=.8 Mj=.5 Fc=.5 Cgso=600.5p
+ Cgdo=62.71p Rg=2.977 Is=202.9f N=1 Tt=135n)
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IRF520 spice model
.model IRF520 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=.1459 Kp=20.79u W=.73 L=2u Vto=3.59
+ Rd=80.23m Rds=444.4K Cbd=622.1p Pb=.8 Mj=.5 Fc=.5 Cgso=517.9p
+ Cgdo=137.3p Rg=6.675 Is=2.438p N=1 Tt=137n)
+ Tox=100n Uo=600 Phi=.6 Rs=.1459 Kp=20.79u W=.73 L=2u Vto=3.59
+ Rd=80.23m Rds=444.4K Cbd=622.1p Pb=.8 Mj=.5 Fc=.5 Cgso=517.9p
+ Cgdo=137.3p Rg=6.675 Is=2.438p N=1 Tt=137n)
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IRF540 spice model
.model IRF540 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=21.34m Kp=20.71u W=.94 L=2u Vto=3.136
+ Rd=22.52m Rds=444.4K Cbd=2.408n Pb=.8 Mj=.5 Fc=.5 Cgso=1.153n
+ Cgdo=445.7p Rg=5.557 Is=2.859p N=1 Tt=142n)
+ Tox=100n Uo=600 Phi=.6 Rs=21.34m Kp=20.71u W=.94 L=2u Vto=3.136
+ Rd=22.52m Rds=444.4K Cbd=2.408n Pb=.8 Mj=.5 Fc=.5 Cgso=1.153n
+ Cgdo=445.7p Rg=5.557 Is=2.859p N=1 Tt=142n)
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IRF541 spice model
.model IRF541 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=21.34m Kp=20.71u W=.94 L=2u Vto=3.136
+ Rd=22.52m Rds=355.6K Cbd=2.408n Pb=.8 Mj=.5 Fc=.5 Cgso=1.031n
+ Cgdo=567.7p Rg=3.842 Is=2.859p N=1 Tt=142n)
+ Tox=100n Uo=600 Phi=.6 Rs=21.34m Kp=20.71u W=.94 L=2u Vto=3.136
+ Rd=22.52m Rds=355.6K Cbd=2.408n Pb=.8 Mj=.5 Fc=.5 Cgso=1.031n
+ Cgdo=567.7p Rg=3.842 Is=2.859p N=1 Tt=142n)
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IRFZ44 spice model
.model IRFZ44 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=13.41m Kp=20.25u W=1.6 L=2u Vto=3.438
+ Rd=716.5u Rds=266.7K Cbd=5.477n Pb=.8 Mj=.5 Fc=.5 Cgso=132.4p
+ Cgdo=1.431n Rg=3.325 Is=880.4p N=1 Tt=103n)
+ Tox=100n Uo=600 Phi=.6 Rs=13.41m Kp=20.25u W=1.6 L=2u Vto=3.438
+ Rd=716.5u Rds=266.7K Cbd=5.477n Pb=.8 Mj=.5 Fc=.5 Cgso=132.4p
+ Cgdo=1.431n Rg=3.325 Is=880.4p N=1 Tt=103n)
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IRFZ45 spice model
.model IRFZ45 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=13.41m Kp=20.25u W=1.6 L=2u Vto=3.438
+ Rd=6.716m Rds=266.7K Cbd=5.477n Pb=.8 Mj=.5 Fc=.5 Cgso=132.4p
+ Cgdo=1.431n Rg=3.325 Is=1.11n N=1 Tt=103n)
+ Tox=100n Uo=600 Phi=.6 Rs=13.41m Kp=20.25u W=1.6 L=2u Vto=3.438
+ Rd=6.716m Rds=266.7K Cbd=5.477n Pb=.8 Mj=.5 Fc=.5 Cgso=132.4p
+ Cgdo=1.431n Rg=3.325 Is=1.11n N=1 Tt=103n)
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IRF640 spice model
.model IRF640 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=19.61m Kp=20.73u W=.66 L=2u Vto=3.788
+ Rd=95.58m Rds=888.9K Cbd=1.872n Pb=.8 Mj=.5 Fc=.5 Cgso=1.745n
+ Cgdo=334.7p Rg=2.954 Is=16.39p N=1 Tt=312n)
+ Tox=100n Uo=600 Phi=.6 Rs=19.61m Kp=20.73u W=.66 L=2u Vto=3.788
+ Rd=95.58m Rds=888.9K Cbd=1.872n Pb=.8 Mj=.5 Fc=.5 Cgso=1.745n
+ Cgdo=334.7p Rg=2.954 Is=16.39p N=1 Tt=312n)
-----------this is a delimiter
IRF740 spice model
.model IRF740 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=8.563m Kp=20.59u W=.78 L=2u Vto=3.657
+ Rd=.3915 Rds=1.778MEG Cbd=1.419n Pb=.8 Mj=.5 Fc=.5 Cgso=1.392n
+ Cgdo=146.6p Rg=.9088 Is=17.65p N=1 Tt=570n)
+ Tox=100n Uo=600 Phi=.6 Rs=8.563m Kp=20.59u W=.78 L=2u Vto=3.657
+ Rd=.3915 Rds=1.778MEG Cbd=1.419n Pb=.8 Mj=.5 Fc=.5 Cgso=1.392n
+ Cgdo=146.6p Rg=.9088 Is=17.65p N=1 Tt=570n)
-----------this is a delimiter
IRF840 spice model
.model IRF840 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=6.382m Kp=20.85u W=.68 L=2u Vto=3.879
+ Rd=.6703 Rds=2.222MEG Cbd=1.415n Pb=.8 Mj=.5 Fc=.5 Cgso=1.625n
+ Cgdo=133.4p Rg=.6038 Is=56.03p N=1 Tt=710n)
+ Tox=100n Uo=600 Phi=.6 Rs=6.382m Kp=20.85u W=.68 L=2u Vto=3.879
+ Rd=.6703 Rds=2.222MEG Cbd=1.415n Pb=.8 Mj=.5 Fc=.5 Cgso=1.625n
+ Cgdo=133.4p Rg=.6038 Is=56.03p N=1 Tt=710n)
-----------this is a delimiter
IRF542 spice model
.model IRF542 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=21.34m Kp=20.71u W=.94 L=2u Vto=3.136
+ Rd=42.52m Rds=444.4K Cbd=2.408n Pb=.8 Mj=.5 Fc=.5 Cgso=1.153n
+ Cgdo=445.7p Rg=5.557 Is=6.196p N=1 Tt=142n)
IRF542 spice model
.model IRF542 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=21.34m Kp=20.71u W=.94 L=2u Vto=3.136
+ Rd=42.52m Rds=444.4K Cbd=2.408n Pb=.8 Mj=.5 Fc=.5 Cgso=1.153n
+ Cgdo=445.7p Rg=5.557 Is=6.196p N=1 Tt=142n)
-----------this is a delimiter
IRF9510 spice model
.model IRF9510 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=300 Phi=.6 Rs=.3715 Kp=10.54u W=.2 L=2u Vto=-3.923
+ Rd=.4523 Rds=444.4K Cbd=331.8p Pb=.8 Mj=.5 Fc=.5 Cgso=2.547n
+ Cgdo=311p Rg=4.087 Is=2.896E-18 N=3 Tt=2250n)
IRF9511 spice model
.model IRF9511 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=300 Phi=.6 Rs=.3715 Kp=10.54u W=.2 L=2u Vto=-3.923
+ Rd=.4523 Rds=266.7K Cbd=331.8p Pb=.8 Mj=.5 Fc=.5 Cgso=2.306n
+ Cgdo=551.8p Rg=.8973 Is=2.896E-18 N=3 Tt=2250n)
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IRF9512 spice model
.model IRF9512 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=300 Phi=.6 Rs=.3715 Kp=10.54u W=.2 L=2u Vto=-3.923
+ Rd=.6523 Rds=444.4K Cbd=331.8p Pb=.8 Mj=.5 Fc=.5 Cgso=2.547n
+ Cgdo=311p Rg=4.087 Is=3.748E-18 N=3 Tt=2250n)
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IRF9540 spice model
.model IRF9540 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=300 Phi=.6 Rs=64.15m Kp=10.18u W=1.5 L=2u
+ Vto=-3.646 Rd=62.45m Rds=444.4K Cbd=2.029n Pb=.8 Mj=.5 Fc=.5
+ Cgso=1.033n Cgdo=469.4p Rg=.3371 Is=54.08E-18 N=2 Tt=140n)
-----------this is a delimiter
IRF9510 spice model
.model IRF9510 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=300 Phi=.6 Rs=.3715 Kp=10.54u W=.2 L=2u Vto=-3.923
+ Rd=.4523 Rds=444.4K Cbd=331.8p Pb=.8 Mj=.5 Fc=.5 Cgso=2.547n
+ Cgdo=311p Rg=4.087 Is=2.896E-18 N=3 Tt=2250n)
IRF9511 spice model
.model IRF9511 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=300 Phi=.6 Rs=.3715 Kp=10.54u W=.2 L=2u Vto=-3.923
+ Rd=.4523 Rds=266.7K Cbd=331.8p Pb=.8 Mj=.5 Fc=.5 Cgso=2.306n
+ Cgdo=551.8p Rg=.8973 Is=2.896E-18 N=3 Tt=2250n)
-----------this is a delimiter
IRF9512 spice model
.model IRF9512 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=300 Phi=.6 Rs=.3715 Kp=10.54u W=.2 L=2u Vto=-3.923
+ Rd=.6523 Rds=444.4K Cbd=331.8p Pb=.8 Mj=.5 Fc=.5 Cgso=2.547n
+ Cgdo=311p Rg=4.087 Is=3.748E-18 N=3 Tt=2250n)
-----------this is a delimiter
IRF9540 spice model
.model IRF9540 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=300 Phi=.6 Rs=64.15m Kp=10.18u W=1.5 L=2u
+ Vto=-3.646 Rd=62.45m Rds=444.4K Cbd=2.029n Pb=.8 Mj=.5 Fc=.5
+ Cgso=1.033n Cgdo=469.4p Rg=.3371 Is=54.08E-18 N=2 Tt=140n)
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The MOSFET parameters are :
- Channel length Spice name : Leff
- Polysilicon gate length Spice name: L
- Gate source overlap Spice name : LD
- Transconductance parameter Spice name : KP
- Threshold voltage Spice name : Vto
- Channel length modulation parameter Spice name: LAMBDA
- Backgate effect parameter Spice name : GAMMA
- Bulk potential Spice name: PHI
- Gate oxide thickness Spice name : TOX 100 nanometers = 1000 Angstroms
- Gate drain overlap capacitance Spice name : CGDO
- Gate source overlap capacitance Spice name: CGSO
- Zero bias planar substrate depletion capacitance Spice name: CJ
- Zero bias sidewall substrate depletion capacitance Spice name: CJSW
- Substrate junction potential Spice name: PB
- Planar substrate junction grading coefficient Spice name: MJ
- Sidewall substrate junction grading coefficient Spice name: MJSW
- Leff [meter]
- L [meter]
- LD [meter]
- KP [A/V^2]
- KAPPA Saturation field factor is used for channel length modulation appears from LEVEL 3 SPICE MODEL
- VTO [Volt]
- LAMBDA [Volt^-1]
- GAMMA [Volt^0.5]
- PHI [Volt]
- TOX [Angstroms] in SPICE the value is in meter for example TOX=100n means 100nanometers
- CGDO [Farad/meter]
- CGSO [Farad/meter]
- CJ [Farad/meter^2]
- CJSW [Farad/meter^2]
- PB [Volt]
- MJ undimensional example: 0,5 ; 0,44
- MJSW undimensional