vineri, 12 iunie 2015

Spice model (s) MOSFET LEVEL 3 for power electronics

       For the analysis of a power electronic circuit designs that need to be like in reality, we need a more accurate model. In power electronics, MOSFET transistors are the most usual. In what follows we will post the list spice models for transistors like IRF540, IRFZ44, IRF810, etc. Level 3 empirical models.
        To simulate real life due to parasitic inductances will include TO220 or TO204 lead inductances as follows:
      For  TO-204 (modified TO-3) source = 12.5nH drain = 5.0nH
      For  TO-220 source = 7.5nH drain = 3.5-4.5nH

Because we introduced lead inductances, voltage spikes due to di/dt will be modeled. This is important because we will see if a MOSFET will exceed the Safe Operating Area, and Maximum Drain Voltage.
    The models will work for Orcad or Ltspice with very minor modifications or not.
    In this model LEVEL 3 the following effects are modeled:
-transfer curves in forward operation
-gate drive characterization of impedance and switching delay for loads
- Rds on resistance variation with respect of Vgs
- reverse mode operation of body diode

IRF510 spice model

.model IRF510 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=.4508 Kp=20.68u W=.64 L=2u Vto=3.697
+ Rd=21.08m Rds=444.4K Cbd=366.5p Pb=.8 Mj=.5 Fc=.5 Cgso=600.5p
+ Cgdo=62.71p Rg=2.977 Is=202.9f N=1 Tt=135n)

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IRF520 spice model 

.model IRF520 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=.1459 Kp=20.79u W=.73 L=2u Vto=3.59
+ Rd=80.23m Rds=444.4K Cbd=622.1p Pb=.8 Mj=.5 Fc=.5 Cgso=517.9p
+ Cgdo=137.3p Rg=6.675 Is=2.438p N=1 Tt=137n)

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IRF540 spice model 

.model IRF540 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=21.34m Kp=20.71u W=.94 L=2u Vto=3.136
+ Rd=22.52m Rds=444.4K Cbd=2.408n Pb=.8 Mj=.5 Fc=.5 Cgso=1.153n
+ Cgdo=445.7p Rg=5.557 Is=2.859p N=1 Tt=142n)

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IRF541 spice model

.model IRF541 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=21.34m Kp=20.71u W=.94 L=2u Vto=3.136
+ Rd=22.52m Rds=355.6K Cbd=2.408n Pb=.8 Mj=.5 Fc=.5 Cgso=1.031n
+ Cgdo=567.7p Rg=3.842 Is=2.859p N=1 Tt=142n)

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IRFZ44 spice model

.model IRFZ44 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=13.41m Kp=20.25u W=1.6 L=2u Vto=3.438
+ Rd=716.5u Rds=266.7K Cbd=5.477n Pb=.8 Mj=.5 Fc=.5 Cgso=132.4p
+ Cgdo=1.431n Rg=3.325 Is=880.4p N=1 Tt=103n)

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IRFZ45 spice model 

.model IRFZ45 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=13.41m Kp=20.25u W=1.6 L=2u Vto=3.438
+ Rd=6.716m Rds=266.7K Cbd=5.477n Pb=.8 Mj=.5 Fc=.5 Cgso=132.4p
+ Cgdo=1.431n Rg=3.325 Is=1.11n N=1 Tt=103n)

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IRF640 spice model

.model IRF640 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=19.61m Kp=20.73u W=.66 L=2u Vto=3.788
+ Rd=95.58m Rds=888.9K Cbd=1.872n Pb=.8 Mj=.5 Fc=.5 Cgso=1.745n
+ Cgdo=334.7p Rg=2.954 Is=16.39p N=1 Tt=312n)
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IRF740 spice model

.model IRF740 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=8.563m Kp=20.59u W=.78 L=2u Vto=3.657
+ Rd=.3915 Rds=1.778MEG Cbd=1.419n Pb=.8 Mj=.5 Fc=.5 Cgso=1.392n
+ Cgdo=146.6p Rg=.9088 Is=17.65p N=1 Tt=570n)

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IRF840 spice model

.model IRF840 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=6.382m Kp=20.85u W=.68 L=2u Vto=3.879
+ Rd=.6703 Rds=2.222MEG Cbd=1.415n Pb=.8 Mj=.5 Fc=.5 Cgso=1.625n
+ Cgdo=133.4p Rg=.6038 Is=56.03p N=1 Tt=710n)

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IRF542 spice model

.model IRF542 NMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=600 Phi=.6 Rs=21.34m Kp=20.71u W=.94 L=2u Vto=3.136
+ Rd=42.52m Rds=444.4K Cbd=2.408n Pb=.8 Mj=.5 Fc=.5 Cgso=1.153n
+ Cgdo=445.7p Rg=5.557 Is=6.196p N=1 Tt=142n)

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IRF9510 spice model

.model IRF9510 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=300 Phi=.6 Rs=.3715 Kp=10.54u W=.2 L=2u Vto=-3.923
+ Rd=.4523 Rds=444.4K Cbd=331.8p Pb=.8 Mj=.5 Fc=.5 Cgso=2.547n
+ Cgdo=311p Rg=4.087 Is=2.896E-18 N=3 Tt=2250n)

IRF9511 spice model

.model IRF9511 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=300 Phi=.6 Rs=.3715 Kp=10.54u W=.2 L=2u Vto=-3.923
+ Rd=.4523 Rds=266.7K Cbd=331.8p Pb=.8 Mj=.5 Fc=.5 Cgso=2.306n
+ Cgdo=551.8p Rg=.8973 Is=2.896E-18 N=3 Tt=2250n)

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  IRF9512 spice model
.model IRF9512 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=300 Phi=.6 Rs=.3715 Kp=10.54u W=.2 L=2u Vto=-3.923
+ Rd=.6523 Rds=444.4K Cbd=331.8p Pb=.8 Mj=.5 Fc=.5 Cgso=2.547n
+ Cgdo=311p Rg=4.087 Is=3.748E-18 N=3 Tt=2250n)

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  IRF9540 spice model
.model IRF9540 PMOS(Level=3 Gamma=0 Delta=0 Eta=0 Theta=0 Kappa=0.2 Vmax=0 Xj=0
+ Tox=100n Uo=300 Phi=.6 Rs=64.15m Kp=10.18u W=1.5 L=2u
+ Vto=-3.646 Rd=62.45m Rds=444.4K Cbd=2.029n Pb=.8 Mj=.5 Fc=.5
+ Cgso=1.033n Cgdo=469.4p Rg=.3371 Is=54.08E-18 N=2 Tt=140n)

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     The MOSFET parameters are :

  •    Channel length     Spice name : Leff    
  •    Polysilicon gate length    Spice name: L
  •    Gate source overlap       Spice name : LD
  •    Transconductance parameter   Spice name : KP
  •    Threshold voltage        Spice name : Vto
  •    Channel length modulation parameter   Spice name: LAMBDA
  •    Backgate effect parameter      Spice name : GAMMA
  •    Bulk potential                        Spice name: PHI
  •    Gate oxide thickness             Spice name : TOX   100 nanometers = 1000 Angstroms
  •    Gate drain overlap capacitance       Spice name : CGDO  
  •    Gate source overlap capacitance     Spice name: CGSO
  •    Zero bias planar substrate depletion capacitance      Spice name: CJ
  •    Zero bias sidewall substrate depletion capacitance   Spice name: CJSW 
  •    Substrate junction potential    Spice name: PB
  •    Planar substrate junction grading coefficient  Spice name: MJ
  •    Sidewall substrate junction grading coefficient Spice name: MJSW
     The units of measure for each parameter in SI:
  •     Leff [meter]
  •     L [meter]
  •     LD  [meter]
  •     KP [A/V^2]
  •     KAPPA Saturation field factor is used for channel length modulation appears from LEVEL 3 SPICE MODEL
  •     VTO [Volt]
  •     LAMBDA [Volt^-1]
  •     GAMMA  [Volt^0.5]
  •     PHI [Volt]
  •     TOX [Angstroms] in SPICE the value is in meter for example TOX=100n means 100nanometers
  •     CGDO [Farad/meter]
  •     CGSO [Farad/meter]
  •     CJ [Farad/meter^2]
  •     CJSW [Farad/meter^2]
  •     PB [Volt]
  •     MJ  undimensional  example: 0,5 ; 0,44
  •     MJSW undimensional 
  

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